Samsung và SK hynix có thể bỏ qua công nghệ Hybrid Bonding cho HBM4
Theo báo chí Hàn Quốc, sự nới lỏng tiêu chuẩn của JEDEC có thể khiến Samsung và SK hynix không áp dụng công nghệ Hybrid Bonding cho bộ nhớ HBM4. Tiêu chuẩn mới cho phép tăng độ dày chip từ 900 micromet lên 1.000 micromet, làm giảm nhu cầu sử dụng công nghệ này.
With hybrid bonding making the news for becoming the preferred choice of bonding for next-generation memory chips, a relaxation of standards by the Joint Electron Device Engineering Council (JEDEC) could lead to Samsung and SK hynix skipping the technology for HBM4 memory, suggests a report from the Korean press. The previous standards had determined that next-generation HBM memory would have a thickness of 900 micrometers, but the new standards could mean that the thickness is relaxed to 1,000 micrometers. Relaxed Standards Could Lead Manufacturers To Skip Hybrid Bonding For Next-Generation HBM, Says Report Word about SK hynix being interested in […] Read full article at https://wccftech.com/hybrid-bonding-was-hbm4s-headline-upgrade-yet-samsung-and-sk-hynix-may-sideline-it-over-relaxed-jedec-rules/